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Feature:
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Capacity
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1GB/2GB/4GB DDR2 RAM
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DDR Memory Type
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DDR2
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No. of Pins
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204 Pin
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Memory Speed MHz
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533/667/800MHZ
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Module Type
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SO DIMM
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Function
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Non ECC Memory
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Detail Description:
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1) DDRII 533/667/800 MHz
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2) 168/184/240-pin socket type dual in line memory module (DIMM)
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3) 2.6V power supply
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4) Data rate: 533/667/800Mbps (max.)
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5) 2.5 V (SSTL-2 compatible) I/O for DDR I products,1.8Vpower supply for DDR II products
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6) Double-data-rate architecture, two data transfers per clock cycle
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7) Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
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8) Data inputs and outputs are synchronized with DQS
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9) DQS is edge aligned with data for read, center aligned with data for write
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10) Differential clock inputs (CK and CK)
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11) DLL aligns DQ and DQS transitions with CK transitions
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12) Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS
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13) Four internal banks for concurrent operation (component)
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14) Data mask(DM) for write data
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15) Auto precharge option for each burst access
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16) Programmable burst length: 2, 4, 8
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17) Programmable/CAS latency (CL): 3
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18) Programmable output driver strength: normal/weak
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19) Refresh cycles: (8192 refresh cycles/64ms)
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20) 7.8US maximum average periodic refresh interval
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21) Posted CAS by programmable additive latency for better command and data bus efficiency
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22) Off-chip-driver impedance adjustment and on-die-termination for better signal quality
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23) DQS can be disabled for single-ended data strobe operation
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24) 2 variations of refresh
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25) Auto refresh
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